Karbalaei, Mohammad, Dideban, Daryoosh, Moezi, Negin. (1398). Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel. فناوری آموزش, 7(1), 27-34. doi: 10.22061/jecei.2019.5739.252
Mohammad Karbalaei; Daryoosh Dideban; Negin Moezi. "Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel". فناوری آموزش, 7, 1, 1398, 27-34. doi: 10.22061/jecei.2019.5739.252
Karbalaei, Mohammad, Dideban, Daryoosh, Moezi, Negin. (1398). 'Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel', فناوری آموزش, 7(1), pp. 27-34. doi: 10.22061/jecei.2019.5739.252
Karbalaei, Mohammad, Dideban, Daryoosh, Moezi, Negin. Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel. فناوری آموزش, 1398; 7(1): 27-34. doi: 10.22061/jecei.2019.5739.252


Contact Us | Help & Support | Site Map

Journal Management System. Designed by sinaweb.